NARROW BANDWIDTH LONG-WAVELENGTH RESONANT-CAVITY PHOTODIODES

Authors
CORBETT B CONSIDINE L WALSH S KELLY WM
Citation
B. Corbett et al., NARROW BANDWIDTH LONG-WAVELENGTH RESONANT-CAVITY PHOTODIODES, Electronics Letters, 29(24), 1993, pp. 2148-2149
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
24
Year of publication
1993
Pages
2148 - 2149
Database
ISI
SICI code
0013-5194(1993)29:24<2148:NBLRP>2.0.ZU;2-2
Abstract
Resonant cavity photodetectors at 1.53mum are demonstrated using the e pitaxial liftoff technique to position an epilayer structure between t wo metallic mirrors. The epilayer consists of a pin structure with qua ntum wells placed strategically at the antinodes of the fabricated cav ity. The quality factor of the 1.16mum long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.