FAR-INFRARED MEASUREMENTS OF GA0.47IN0.53AS INP SHORT-PERIOD SUPERLATTICES/

Authors
SETHI TS DUMELOW T SHERMAN WF PARKER TJ
Citation
Ts. Sethi et al., FAR-INFRARED MEASUREMENTS OF GA0.47IN0.53AS INP SHORT-PERIOD SUPERLATTICES/, Superlattices and microstructures, 14(2-3), 1993, pp. 167-171
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
14
Issue
2-3
Year of publication
1993
Pages
167 - 171
Database
ISI
SICI code
0749-6036(1993)14:2-3<167:FMOGIS>2.0.ZU;2-E
Abstract
Oblique incidence far infrared spectroscopic reflectivity studies of M BE-grown Ga0.471n0.53As/InP short period superlattices were conducted at 300K and at 77K in both s- and p-polarisation. The effects of furth er alloying due to the migration of the As and P at the interface were observed. The experimental results were compared to a bulk slab model that took into account the alloying of As in InP and P in GaInAs.