10-GB S STRAINED MQW DFB-LD TRANSMITTER MODULE AND SUPERLATTICE APD RECEIVER MODULE USING GAAS-MESFET ICS/

This paper describes the design and performance of a 10-Gb/s laser dio de (LD) transmitter and avalanche photodiode (APD) receiver, both of w hich are based on GaAs MESFET IC's. The LD transmitter consists of a s trained MQW distributed-feedback LD and one chip LD driver IC. The mod ule output power is +4.6 dBm at 10 Gb/s. The APD receiver consists of an InGaAsP/InAlAs superlattice-APD and an IC-preamplifier with the 10- Gb/s receiver sensitivity of -27.4 dBm. As for the LD transmitter, we discuss the optimum impedance-matching design from the viewpoint of hi gh-speed interconnection between LD and driver IC's. As for the APD re ceiver, the key issue is input impedance design of preamplifier IC, co nsidering noise and bandwidth characteristics. Total performance of th e transmitter and receiver is verified by a 10-Gb/s transmission exper iment and a penalty-free 10-Gb/s fiber-optic link over 80 km of conven tional single-mode fiber is successfully achieved.