HIGHLY DOPED 1.55-MU-M GAXIN1-XAS INP DISTRIBUTED-BRAGG-REFLECTOR STACKS/

Authors
GUY P WOODBRIDGE K HAYWOOD SK HOPKINSON M
Citation
P. Guy et al., HIGHLY DOPED 1.55-MU-M GAXIN1-XAS INP DISTRIBUTED-BRAGG-REFLECTOR STACKS/, Electronics Letters, 30(18), 1994, pp. 1526-1527
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
18
Year of publication
1994
Pages
1526 - 1527
Database
ISI
SICI code
0013-5194(1994)30:18<1526:HD1GID>2.0.ZU;2-0
Abstract
The authors have investigated 20 period lattice matched mirror stacks doped to 5 X 10(18)cm(-1) and 10(19)cm(-1) at 1.55 mu m in Ga(x)In(1-x )AS/InP and have obtained greater than 95% reflectivity over 100nm and peak reflectivities up to 98%.