IMPLANT ISOLATION OF INGAAS GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURE USING BORON/

Authors
TENG SJJ WU CS HOU LD WANG DC
Citation
Sjj. Teng et al., IMPLANT ISOLATION OF INGAAS GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURE USING BORON/, Electronics Letters, 30(18), 1994, pp. 1539-1540
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
18
Year of publication
1994
Pages
1539 - 1540
Database
ISI
SICI code
0013-5194(1994)30:18<1539:IIOIGP>2.0.ZU;2-Q
Abstract
Implant isolation studies of an InGaAs/GaAs pseudomorphic high-electro n mobility transistor (PHEMT) structure using boron were conducted. Me asured sheet resistances reached a maximum value as the boron dose was varied from 10(11) to 2 x 10(13)cm(-2) at an energy of 380keV. The au thors present the optimum single boron implant dose/energy in terms of isolation sheet resistance, anneal temperature, and breakdown voltage . A measured sheet resistance in the 10(10)Omega/square range was achi eved using a boron dose/ energy of 2 x 10(12)cm(-2) and 380keV without or with an anneal temperature up to 470 degrees C.