THE PHOTOSENSITIVITY OF A YBACUO-SI STRUCTURE AT ROOM-TEMPERATURE

Authors
SKRYSHEVSKY VA KUS P STRIKHA VI VDOVENKOVA TA KARLOVSKY K
Citation
Va. Skryshevsky et al., THE PHOTOSENSITIVITY OF A YBACUO-SI STRUCTURE AT ROOM-TEMPERATURE, Superconductor science and technology, 7(9), 1994, pp. 651-654
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
Journal title
Superconductor science and technology → ACNP
ISSN journal
09532048
Volume
7
Issue
9
Year of publication
1994
Pages
651 - 654
Database
ISI
SICI code
0953-2048(1994)7:9<651:TPOAYS>2.0.ZU;2-N
Abstract
A multilayer photosensitive structure based on a YBaCuO-Si contact has been fabricated; photocurrent spectra and their dependence on applied voltage bias have been studied. We report the observation of photocur rent oscillations at voltage bias. Using the data of Auger spectroscop y we conclude that photosensitivity characteristics can be explained b y the model of potential barriers with an expansive interfacial layer between the Si and the YBaCuO film.