Sa. Jodgudri et al., ELECTROSYNTHESIS OF TIN SULFIDE AND YTTRIUM SULFIDE THIN-FILMS, Indian Journal of Pure & Applied Physics, 32(9), 1994, pp. 772-777
Thin films of SnS and YS1.71-1.76 have been prepared at room temperatu
re by electrodeposition method and the preparative parameters such as
concentration, composition and complexing agent were optimized. The fi
lms were characterized by XRD, SEM and optical absorption techniques.
The deposition potentials were found to be substrate, complexing agent
and concentration dependent. Optical absorption studies showed that t
he SnS film has indirect gap of 1.41 eV while YS1.71-1.76 film has dir
ect gap of 1.85 eV.