ELECTRON-PHONON INTERACTION DURING RESONANT-TUNNELING THROUGH A DOUBLE-BARRIER HETEROSTRUCTURE

Authors
FIGIELSKI T MAKOSA A WOSINSKI T HARNESS PC SINGER KE
Citation
T. Figielski et al., ELECTRON-PHONON INTERACTION DURING RESONANT-TUNNELING THROUGH A DOUBLE-BARRIER HETEROSTRUCTURE, Solid state communications, 91(11), 1994, pp. 913-917
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
11
Year of publication
1994
Pages
913 - 917
Database
ISI
SICI code
0038-1098(1994)91:11<913:EIDRTA>2.0.ZU;2-F
Abstract
We investigated thoroughly the current-voltage characteristic and the differential conductance of AlGaAs-based resonant-tunneling diodes. We have revealed a fine oscillatory structure of the broad plateau beyon d the main resonance peak, displaying a period of 36 mV. We argue that this plateau represents a convolution of several satellite peaks resu lting from the resonant tunneling via coupled electron-phonon states i n the quantum well.