WAKE FIELDS IN SEMICONDUCTOR PLASMAS

Citation
Vi. Berezhiani et Sm. Mahajan, WAKE FIELDS IN SEMICONDUCTOR PLASMAS, Physical review letters, 73(13), 1994, pp. 1837-1840
Citations number
20
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
73
Issue
13
Year of publication
1994
Pages
1837 - 1840
Database
ISI
SICI code
0031-9007(1994)73:13<1837:WFISP>2.0.ZU;2-B
Abstract
It is shown that an intense short laser pulse propagating through a se miconductor plasma will generate longitudinal Langmuir waves in its wa ke. The measurable wake field can be used as a diagnostic to study non linear optical phenomena. For narrow gap semiconductors (for example, InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-held acc elerators.