SPIN ORIENTATION DUE TO LONGITUDINAL CURRENT AND INTERBAND TUNNELING IN NARROW-GAP HETEROSTRUCTURES

Citation
A. Zakharova et al., SPIN ORIENTATION DUE TO LONGITUDINAL CURRENT AND INTERBAND TUNNELING IN NARROW-GAP HETEROSTRUCTURES, Journal of physics. Condensed matter, 6(37), 1994, pp. 7537-7546
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
6
Issue
37
Year of publication
1994
Pages
7537 - 7546
Database
ISI
SICI code
0953-8984(1994)6:37<7537:SODTLC>2.0.ZU;2-I
Abstract
The mechanism of spin orientation under the interband tunnelling trans port of carriers due to the longitudinal current has been considered. The spin-dependent interband tunnelling probability has been calculate d for Kane and Dirac-like models. For lead chalcogenides and InAs/AlGa Sb/GaSb heterostructures the degree of spin orientation can be greater than 10% under weak current-induced longitudinal anisotropy of the di stribution function.