ELECTRON-CAPTURE IN GAAS QUANTUM-WELLS

The capture time for an electron in a graded index separate confinemen t heterostructure (GRINSCH) is calculated as a function of quantum-wel l width. The electron's interactions with the other electrons in the w ell along with the phonons are included in the random-phase approximat ion using full multiple-subband and frequency-dependent screening. It is shown that at sufficiently high electron densities, there is a sign ificant increase of the capture rate with electron density except for quantum-well widths near a phonon resonance.