MICROSTRUCTURE STUDY OF A DEGRADED PSEUDOMORPHIC SEPARATE-CONFINEMENTHETEROSTRUCTURE BLUE-GREEN LASER-DIODE

The microstructure of a degraded II-VI blue-green laser diode based on the ZnCdSe/ZnSSe/ZnMgSSe pseudomorphic separate confinement heterostr ucture has been examined by transmission electron microscopy. Triangul ar nonluminescent dark defects observed in the laser stripe region by electroluminescence microscopy have been identified to be dislocation networks developed at the quantum-well region. The dislocation network s have been observed to be nucleated at threading dislocations origina ting from pairs of V-shaped stacking faults which are nucleated at or near the II-VI/GaAs interface and extending into the n-ZnMgSSe lower c ladding layer.