METALORGANIC CHEMICAL-VAPOR-DEPOSITION TECHNIQUE FOR GROWING C-AXIS ORIENTED ZNO THIN-FILMS IN ATMOSPHERIC-PRESSURE AIR

Authors
KUMAR ND KAMALASANAN MN CHANDRA S
Citation
Nd. Kumar et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION TECHNIQUE FOR GROWING C-AXIS ORIENTED ZNO THIN-FILMS IN ATMOSPHERIC-PRESSURE AIR, Applied physics letters, 65(11), 1994, pp. 1373-1375
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
11
Year of publication
1994
Pages
1373 - 1375
Database
ISI
SICI code
0003-6951(1994)65:11<1373:MCTFGC>2.0.ZU;2-H
Abstract
ZnO thin films have been grown in atmospheric pressure and ambient atm ospheric air using zinc 2-ethyl hexanoate as zinc source by metalorgan ic chemical vapor deposition technique. The films grown on glass above 350-degrees-C showed c-axis orientation as seen from x-ray diffractio n studies. The films were highly transparent and free from any visual defects. The growth rate and morphology of the film was found to depen d on the substrate temperature. Auger electron spectroscopy shows the presence of carbon as an impurity.