SURFACE PHOSPHIDATION OF GAAS BY THE LASER-INDUCED DISSOCIATION OF TRIMETHYLPHOSPHINE

Authors
DAVIDSON JL JOHN P ROBERTS PG JUBBER MG WILSON JIB
Citation
Jl. Davidson et al., SURFACE PHOSPHIDATION OF GAAS BY THE LASER-INDUCED DISSOCIATION OF TRIMETHYLPHOSPHINE, Applied physics letters, 65(11), 1994, pp. 1397-1399
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
11
Year of publication
1994
Pages
1397 - 1399
Database
ISI
SICI code
0003-6951(1994)65:11<1397:SPOGBT>2.0.ZU;2-T
Abstract
The localized phosphidation of single-crystal GaAs, by the frequency d oubled argon ion laser photolysis at 257 nm Of P(CH3)3, is reported. T racks were deposited by scanning the focused laser beam at a speed of 34.6 mum s-1 and were characterized by scanning electron microscopy an d laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.