GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT

High quality, completely relaxed Ge films have been grown on Si(111) u sing Sb as surfactant at the initial stage of growth. After desorbing the surface Sb layer, cusplike reflection high-energy electron diffrac tion intensity oscillations indicated excellent Ge layer-by-layer epit axy. High resolution x-ray diffraction analysis showed a very high cry stalline quality and well resolved thickness fringes consistent with a flat relaxed Ge layer. Chemical preferential etching experiments reve aled a defect density of down to approximately 3 X 10(4) cm-2.