HIGHLY UNIFORM INGAAS GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

We report the direct deposition of strained InGaAs-dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical v apor deposition growth. High resolution scanning electron micrographs show highly uniform quantum-sized dots formed by the Stranski-Krastano w growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous hete rointerface. The average dot size and area dot density can be controll ed accurately by growth temperature, and InGaAs deposition thickness, respectively.