DIRECT MEASUREMENTS OF LATTICE-PARAMETER VARIATIONS AND RELAXATION KINETICS IN STRAINED SI1-XGEX SI HETEROSTRUCTURES/

Authors
SARDELA MR HANSSON GV
Citation
Mr. Sardela et Gv. Hansson, DIRECT MEASUREMENTS OF LATTICE-PARAMETER VARIATIONS AND RELAXATION KINETICS IN STRAINED SI1-XGEX SI HETEROSTRUCTURES/, Applied physics letters, 65(11), 1994, pp. 1442-1444
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
11
Year of publication
1994
Pages
1442 - 1444
Database
ISI
SICI code
0003-6951(1994)65:11<1442:DMOLVA>2.0.ZU;2-K
Abstract
Lattice parameter variations in strained Si1-xGex/Ge (x<0.23) induced by high-temperature annealing in the range 700-1000-degrees-C, were de termined by x-ray high-resolution reciprocal lattice mapping of the cr ystal structure. In the range 700-800-degrees-C, the strain relaxation was found to increase by one order of magnitude owing to glide propag ation of misfit dislocations, with an activation energy of 2.3 eV In t he range 850-1000-degrees-C, relaxation was still high but the increas e with the temperature was limited by dislocation interactions.