PREPARATION OF EPITAXIAL TLBA2CA2CU3O9 HIGH T(C) THIN-FILMS ON LAALO3(100) SUBSTRATES

Citation
A. Piehler et al., PREPARATION OF EPITAXIAL TLBA2CA2CU3O9 HIGH T(C) THIN-FILMS ON LAALO3(100) SUBSTRATES, Applied physics letters, 65(11), 1994, pp. 1451-1453
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
11
Year of publication
1994
Pages
1451 - 1453
Database
ISI
SICI code
0003-6951(1994)65:11<1451:POETHT>2.0.ZU;2-H
Abstract
Epitaxial TlBa2Ca2Cu3O9 high T(c) thin films were prepared on LaAlO3 ( 100) substrates by a combination of laser ablation and thermal evapora tion of thallium oxide. X-ray diffraction patterns of theta-2theta sca ns showed that the films consisted of highly c axis oriented TlBa2Ca2C u3O9. Phi scan measurements revealed an epitaxial growth of the TlBa2C a2CU3O9 thin films on the LaAlO3 (100) substrates. Ac inductive measur ements indicated the onset of superconductivity at 110 K. At 6 K, the critical current density was 4 X 10(6) A/cm2 in zero magnetic field an d 6 X 10(5) A/CM2 at a magnetic field of 3 T parallel to the c axis.