PREPARATION OF LA-MODIFIED PBTIO3 THIN-FILMS ON THE OXIDE BUFFER LAYERS WITH NACL-TYPE STRUCTURE

La-modified PbTiO3(PLT: Pb0.9La0.1Ti0.975O3) thin films by rf magnetro n sputtering were prepared on the preferred (100)-oriented oxide buffe r layers with NaCl-type structure, which were prepared by plasma-enhan ced metalorganic chemical vapor deposition. Fused silica, (111)Si, sod a-lime glass, and stainless steel were used as the substrates to prepa re the oxide buffer layers. The c-axis and a-axis preferred oriented P LT thin films were obtained on the buffer layer, independent of the ki nd of substrate. Further, highly c-axis oriented PLT thin films were o btained when the substrate had a large thermal expansion coefficient. Significant pyroelectric currents were detected without a poling treat ment. The NiCr/PLT/(100)Pt/(100)MgO/stainless steel structure had a di electric constant of 250, a dielectric loss factor tan delta of 0.8%, and a pyroelectric coefficient of 3.8 X 10(-4) C/M2 K.