CARRIER RELAXATION IN INGAAS HETEROSTRUCTURES

Authors
SUCHA G BOLTON SR CHEMLA DS SIVCO DL CHO AY
Citation
G. Sucha et al., CARRIER RELAXATION IN INGAAS HETEROSTRUCTURES, Applied physics letters, 65(12), 1994, pp. 1486-1488
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
12
Year of publication
1994
Pages
1486 - 1488
Database
ISI
SICI code
0003-6951(1994)65:12<1486:CRIIH>2.0.ZU;2-L
Abstract
We present time-resolved measurements of carrier dynamics in bulk and quantum wells InGaAs, using differential absorption spectroscopy. We f ind that the carrier thermalization time is 200-300 fs regardless of l ayer width for sample thickness ranging from 100 to 6000 angstrom. The efficiency of screening relative to phase space filling is larger in the bulk than in the quantum wells.