A NONMECHANICAL LASER SCANNER BASED ON ELECTRON-BEAM-PUMPED ALGAINP-GAINP SEMICONDUCTOR STRUCTURES

Authors
CORNELISSEN HJ SAVERT CJ NIESTEN MJH VRIJSSEN GAHM VALSTER A VANDERPOEL CJ
Citation
Hj. Cornelissen et al., A NONMECHANICAL LASER SCANNER BASED ON ELECTRON-BEAM-PUMPED ALGAINP-GAINP SEMICONDUCTOR STRUCTURES, Applied physics letters, 65(12), 1994, pp. 1492-1494
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
12
Year of publication
1994
Pages
1492 - 1494
Database
ISI
SICI code
0003-6951(1994)65:12<1492:ANLSBO>2.0.ZU;2-#
Abstract
An AlGaInP-GaInP strained-layer quantum well laser structure emitting at 670 nm is pumped by a 7-20 keV scanning electron beam. At room temp erature, a threshold power density as low as 57 W/mm2 is obtained, whi ch is only 3.8 X the value for diode laser operation. More than 250 po ints are resolved on a 5 mm bar. They are scanned at a speed of 1000 m /s at an output level of 20 mW.