FEMTOSECOND LASER EXCITATION OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2

Citation
Mf. Becker et al., FEMTOSECOND LASER EXCITATION OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2, Applied physics letters, 65(12), 1994, pp. 1507-1509
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
12
Year of publication
1994
Pages
1507 - 1509
Database
ISI
SICI code
0003-6951(1994)65:12<1507:FLEOTS>2.0.ZU;2-A
Abstract
We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser p ulses. We have determined the dynamic response of the complex refracti ve index of VO2 thin films by making pump-probe optical transmission a nd reflection measurements at 780 nm. The phase transition was found t o be largely prompt with the optical properties of the high-temperatur e metallic state being attained within 5 ps. The ultrafast change in c omplex refractive index enables ultrafast optical switching devices in VO2.