SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY

Authors
HSU CC XU JB WILSON IH ANDERSSON TG THORDSON JV
Citation
Cc. Hsu et al., SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(12), 1994, pp. 1552-1554
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
12
Year of publication
1994
Pages
1552 - 1554
Database
ISI
SICI code
0003-6951(1994)65:12<1552:SGOGBM>2.0.ZU;2-F
Abstract
Steps of monolayer height (0.28 nm) were observed by atomic force micr oscopy on a GaAs surface grown by molecular beam epitaxy. The monolaye r terrace width between steps was found to be as large as 1000 nm in s ome areas. Surface reconstruction affects the surface diffusion proces s during growth and the shape of the step edges. Growth spirals were o bserved. Spirals originate from screw dislocations. The growth mechani sm is according to the Burton-Cabrera-Frank theory.