INTERFACE ROUGHNESS SCATTERING IN THIN, UNDOPED GAINP GAAS QUANTUM-WELLS/

Authors
MITCHEL WC BROWN GJ LO I ELHAMRI S AHOUJJA M RAVINDRAN K NEWROCK RS RAZEGHI M HE XG
Citation
Wc. Mitchel et al., INTERFACE ROUGHNESS SCATTERING IN THIN, UNDOPED GAINP GAAS QUANTUM-WELLS/, Applied physics letters, 65(12), 1994, pp. 1578-1580
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
12
Year of publication
1994
Pages
1578 - 1580
Database
ISI
SICI code
0003-6951(1994)65:12<1578:IRSITU>2.0.ZU;2-2
Abstract
Electronic transport properties of very thin undoped GaInP/GaAs quantu m wells have been measured by temperature dependent low field Hall eff ect and by Shubnikov-de Haas effect. Strong Shubnikov-de Haas oscillat ions were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 7 0 000 cm2/Vs at carrier concentrations of 6.5x10(11) cm-2 were observe d in a 20 angstrom quantum well. The results are compared with the the ory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theroy are observed.