COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES

Authors
FERLETCAVROIS V MUSSEAU O LERAY JL COIC YM LECARVAL G GUICHARD E
Citation
V. Ferletcavrois et al., COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES, IEEE electron device letters, 15(3), 1994, pp. 82-84
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
3
Year of publication
1994
Pages
82 - 84
Database
ISI
SICI code
0741-3106(1994)15:3<82:COTSTH>2.0.ZU;2-I
Abstract
We propose a simple model to evaluate the sensitivity to heavy ions of SRAM's in different CMOS/SIMOX technologies. The critical Linear Ener gy Transfer LET(c) and the asymptotic cross section sigma characterize the sensitivity of a memory. Theoretical values of LET(c) and sigma a re calculated according to intrinsic characteristics of the technology (thickness of the silicon layer, lateral bipolar amplification) and d esign parameters of the memory, LET(c) and sigma are then compared to experiments.