ULTRA-HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

We report on the microwave performance of InP/In0.53Ga0.41As heterojun ction bipolar transistors (HBT's) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The f(T) and f(max) of the HBT having two 1.5 x 10 mu m(2) emitter fingers were 175 GHz and 70 GHz, respecti vely, at I-C = 40 mA and V-CE = 1.5 V. To our knowledge, the f(T) of t his device is the highest of any type of bipolar transistors yet repor ted. These results indicate the great potential of carbon-doped base I nP/InGaAs HBT's for high-speed applications.