GROWTH, MORPHOLOGY AND ELECTRICAL-TRANSPORT PROPERTIES OF MOCVD-GROWNP-INSB

p-type InSb was prepared from trimethyl indium and trimethyl antimony at temperatures between 420 and 490-degrees-C. A narrow window in the growth conditions of temperature and V/III ratio was found for InSb, w ith non-uniform, inhomogeneous epilayer growth for conditions other th an optimum. Optimum morphologies were achieved for V/III ratios betwee n 2.2 and 2.5 and at a temperature of 450-degrees-C and the use of low pressure in the growth of InSb was observed to result in an enhanced uniformity. The InSb prepared displayed type conversion over the range 70-300 K; analysis of the transport properties is then complicated by the contributions from two carriers. Calculations using Fermi-Dirac s tatistics were carried out, identifying the majority carrier to be hol es over the entire temperature range considered. Calculations also ide ntify an acceptor level with activation energy of 16 +/- 0.5 meV, an a cceptor concentration of (2.65 +/- 0.02) x 10(17) cm-3, in good agreem ent with conductivity measurements, and a low-temperature hole mobilit y of 450 cm2 V-1 s-1. The detailed analysis employing Fermi-Dirac stat istics is then extended to determine the temperature dependence of the Fermi level in InSb and InAs for various impurity compositions.