K. Mallik et al., A PHOTOLUMINESCENCE AND PHOTOCAPACITANCE STUDY OF GAAS-IN AND GAAS-SBLAYERS GROWN BY LIQUID-PHASE EPITAXY, Semiconductor science and technology, 9(9), 1994, pp. 1649-1653
Results of Hall, photoluminescence and photocapacitance measurements p
erformed on GaAs layers grown by liquid-phase epitaxy (LPE) and doped
with various amounts of indium (In) and antimony (Sb) are presented. H
all measurements show that such doping marginally enhances the mobilit
y in a certain optimum doping range. Near-band-edge photoluminescence
spectra indicate the presence of C(As) and Si(As) as major acceptor im
purities in lightly In-doped material. The latter impurity is not dete
cted in heavily In-doped GaAs layers or in Sb-doped layers with either
low and high doping density. Photocapacitance measurements reveal the
presence of hole traps A and B, reported previously in undoped LPE Ga
As. Indium doping reduces the total density of these traps. Furthermor
e, Sb doping induces a very sharp fall in the density of trap B. The r
esults indicate that the hole trap B may be related to a Ga(As) antisi
te defect.