SHORT-TIME ANNEALING OF AS-GROWN P-CDTE WAFERS

Undoped p-CdTe bulk crystals were grown by the vertical Bridgman metho d from a slightly Cd-rich melt. The crystals were characterized by x-r ay diffraction and topography, capacitance-voltage and low-temperature photoluminescence (PL) measurements. The compensation conditions of N (A) - N(D) almost-equal-to 3 x 10(15) cm-3 were obtained for the as-gr own crystals. The as-grown p-CdTe monocrystalline wafers were short-ti me annealed in liquid Ga to create a donor-doped layer. To distinguish the role of Ga, the same annealing was done in Cd vapour and in a vac uum. The PL spectra at 4.2 K over all the volume of the annealed wafer s have been studied. The changes of PL lines were connected with the i nteraction between Ga dopant and the native structural defects and res idual impurities.