HYDROGEN-RELATED SHALLOW THERMAL DONORS IN CZOCHRALSKI SILICON

Six shallow donors are shown to form in Czochralski silicon deliberate ly doped with hydrogen during the early stages of heat treatment at 35 0-degrees-C. The ground state energies of five of these donors are alt ered slightly in material doped with deuterium rather than hydrogen, d emonstrating the presence of hydrogen in their cores. One of the donor s may account for some of the weak IR absorption features detected in as-grown material. The formation of these donors appears to be linked to the generation of the well known oxygen-related double thermal dono rs and may reflect the partial passivation of these latter defects.