TRANSPORT-PROPERTIES OF A WIDE-QUANTUM-WELL VELOCITY MODULATION TRANSISTOR STRUCTURE

Authors
KUROBE A CASTLETON IM LINFIELD EH GRIMSHAW MP BROWN KM RITCHIE DA JONES GAC PEPPER M
Citation
A. Kurobe et al., TRANSPORT-PROPERTIES OF A WIDE-QUANTUM-WELL VELOCITY MODULATION TRANSISTOR STRUCTURE, Semiconductor science and technology, 9(9), 1994, pp. 1744-1747
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
9
Year of publication
1994
Pages
1744 - 1747
Database
ISI
SICI code
0268-1242(1994)9:9<1744:TOAWVM>2.0.ZU;2-H
Abstract
Results are presented on electron transport in a wide-quantum-well dua l-channel velocity modulation transistor, where both front and back ga tes modulate the resistance through variation of the mobility, whilst maintaining a constant carrier concentration. A mobility modulation ra tio of over 100 is achieved at a carrier concentration of 2 x 10(11) c m-2 by transferring electrons between the two conducting channels whic h are 100 nm apart. Mobility modulation due to deformation of the wave functions is also observed when one of the channels is fully depleted.