EFFICIENCY CALIBRATION OF A GE(IN) SEMICONDUCTOR DETECTOR BY THIN-TARGET AND THICK-TARGET PIXE

The efficiency of a Ge(In) semiconductor x-ray detector was measured i n the energy region 1-25 keV using proton-induced x-rays from thick ta rgets and from thin targets of standard thickness, and the results of the two calibration methods were compared. A proton energy of 2.00 MeV was used in an external beam facility. A model based on fundamental p arameters (mass absorption coefficients, fluorescence yields and relat ive x-ray emission rates) was used to reproduce the experimental resul ts.