HALL-MOBILITY OF LOW-TEMPERATURE-DEPOSITED POLYSILICON FILMS BY CATALYTIC CHEMICAL-VAPOR-DEPOSITION METHOD

Nondoped polysilicon films are deposited at temperatures as low as 260 degrees C by the catalytic chemical vapor deposition (cat-CVD) method using a silane and hydrogen gas mixture. Electrical properties such a s the Hall mobility are investigated for various measuring temperature s. It is found that the Hall mobility depends on the hydrogen how rate s during deposition and is larger than 20 cm(2)/V.s, and that the barr ier height at the grain boundary appears to be lower than the thermal activation energy at room temperature.