DEPTH PROFILING OF OXYGEN CONCENTRATION OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING

Authors
HONDA S TSUJIMOTO A WATAMORI M OURA K
Citation
S. Honda et al., DEPTH PROFILING OF OXYGEN CONCENTRATION OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING, JPN J A P 2, 33(9A), 1994, pp. 120001257-120001260
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
9A
Year of publication
1994
Pages
120001257 - 120001260
Database
ISI
SICI code
Abstract
Depth profiling of the oxygen concentration of indium tin oxide (ITO) films on glass substrates has been investigated using a high-energy io n beam. Hot-cathode Penning-discharge sputtering (HC-PDS) in the mixed gases of argon and oxygen was applied to fabricate the films. It is f ound that there is a correlation between the depth profile of oxygen c oncentration and the electrical properties. The effect of partial pres sures of oxygen gas on the depth profile of the oxygen concentration a nd on electrical properties is discussed.