I. Bloom et al., DISCRETE FLUCTUATORS AND BROAD-BAND NOISE IN THE CHARGE-DENSITY-WAVE IN NBSE3, Physical review. B, Condensed matter, 50(8), 1994, pp. 5081-5088
In small samples of NbSe3 the broadband noise of the sliding charge-de
nsity wave (CDW) can be partially resolved into two-state and multista
te fluctuators, which show strong sensitivity to the bias current and
temperature. Explicit violations of detailed balance appear. Near the
threshold bias for sliding, intermittent periods of noise occur, indic
ating that some or all of the sample fluctuates between the pinned and
sliding states. The behavior of the discrete fluctuators under a vari
ety of time-dependent bias conditions indicates that some particular c
onfigurations are available for the CDW in both sliding and pinned sta
tes, but with slower dynamics in the pinned state. The results are con
sistent with a model in which the noise comes from collective rearrang
ements of defects in the CDW.