TEMPERATURE-INDUCED MANIPULATION OF NUCLEATION DURING SI AND GE MOLECULAR-BEAM EPITAXY

Intermittent-radiant-heating-induced manipulation of nucleation has be en accomplished during molecular-beam epitaxy of Si on Si(111) and Ge on Ge(111). Features in the reflection high-energy electron-diffractio n intensity were observed that could be related to the evolution of th e surface-step density by comparing with Monte Carlo simulations. We r eport rapid phase shifts of up to 180-degrees effectuated over the gro wth of one to two bilayers and distinct beat periodicities during laye r-by-layer growth conditions. An anomalous phase shift was observed fo r T(s) close to the step-flow growth regime.