INTERBAND OPTICAL-TRANSITIONS IN QUANTUM-WELLS IN NONIDEAL INTERFACES

An analytical approach based on the methods of disordered-systems theo ry and taking into account the strong difference between light-hole an d heavy-hole effective masses is developed and applied to the problem of optical transitions in semiconductor quantum wells with nonideal in terfaces. Two kinds of interface disorder are considered: inhomogeneit y of the right- and left-interface positions and inhomogeneity of allo y composition in the potential barriers (wide-gap materials of the qua ntum-well structure are assumed to be alloys). Calculation of the phot oluminescence and photoluminescence-excitation spectra are carried out for the cases of long-scale and short-scale correlated disorder. Both nondoped and heavily n- and p-doped heterostructures are considered. Theoretical results are compared with the experimental data for the n- doped heterostructures Ga0.47In0.53As/Al0.48In0.52As.