MAGNETIC QUANTUM EFFECTS IN AMORPHOUS-HYDROGENATED-SILICON DOUBLE SCHOTTKY DIODES

Amorphous-silicon double Schottky switching diodes, with one contact o f vanadium, can show discrete steps in the room-temperature current-vo ltage characteristics in the ON state at quantized resistance values. Additional steps at half-integer values appear in a magnetic field. We have found that a threshold field is required and that the field must be at an angle to the conducting filament. The step separation does n ot appear to change with field. A small-scale statistical analysis sho ws that the occurrence of steps at half-integer values appears to be r eal. Mechanisms for this are suggested.