TEMPERATURE-DEPENDENCE OF THE RESISTANCE OF ONE-DIMENSIONAL METAL-FILMS WITH DOMINANT NYQUIST PHASE BREAKING

Citation
Pm. Echternach et al., TEMPERATURE-DEPENDENCE OF THE RESISTANCE OF ONE-DIMENSIONAL METAL-FILMS WITH DOMINANT NYQUIST PHASE BREAKING, Physical review. B, Condensed matter, 50(8), 1994, pp. 5748-5751
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
8
Year of publication
1994
Pages
5748 - 5751
Database
ISI
SICI code
0163-1829(1994)50:8<5748:TOTROO>2.0.ZU;2-A
Abstract
We report the results of a comprehensive study of the temperature depe ndences of the resistance of one-dimensional narrow gold films with re spect to the effects of weak localization (WL) and electron-electron i nteraction (EEI) in a wide temperature range. The electron wave-functi on coherence for such samples is limited by electron-electron collisio ns with small energy transfer (the Nyquist phase-breaking mechanism). It is shown that the temperature dependence of the WL contribution to the resistance, obtained for such a case, is in excellent agreement wi th the theory by Altshuler, Aronov, and Khmelnitskii. The experimental dependences DELTAR (T) for one-dimensional samples are described quan titatively by the sum of the WL contribution, the contribution of the singlet part of the diffusion channel of EEI, and the contribution of the quantum interference between electron-phonon and electron-impurity scattering.