T. David et al., EPITAXIAL-GROWTH OF C-60 ON AG(110) STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND TUNNELING SPECTROSCOPY, Physical review. B, Condensed matter, 50(8), 1994, pp. 5810-5813
Using a scanning tunneling microscope, the growth of C60 on Ag(110) is
explored. The substrate influences the natural tendency of the fuller
ene molecules to pack closely and an overlayer system with twofold rot
ational symmetry is formed: Ag(110)c(4 x 4)C60. This represents a dist
orted close-packed configuration for the C60 molecules, where the near
est-neighbor distance observed in bulk C60 is maintained. Initial isla
nd growth occurs on terrace sites away from substrate step edges, whic
h bunch with increasing fullerne coverage. Above monolayer coverage, C
60 grows epitaxially, maintaining twofold rotational symmetry. Tunneli
ng spectroscopy is used to explore differences between the electronic
structure in the monolayer and multilayer regimes.