EPITAXIAL-GROWTH OF C-60 ON AG(110) STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND TUNNELING SPECTROSCOPY

Citation
T. David et al., EPITAXIAL-GROWTH OF C-60 ON AG(110) STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND TUNNELING SPECTROSCOPY, Physical review. B, Condensed matter, 50(8), 1994, pp. 5810-5813
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
8
Year of publication
1994
Pages
5810 - 5813
Database
ISI
SICI code
0163-1829(1994)50:8<5810:EOCOAS>2.0.ZU;2-W
Abstract
Using a scanning tunneling microscope, the growth of C60 on Ag(110) is explored. The substrate influences the natural tendency of the fuller ene molecules to pack closely and an overlayer system with twofold rot ational symmetry is formed: Ag(110)c(4 x 4)C60. This represents a dist orted close-packed configuration for the C60 molecules, where the near est-neighbor distance observed in bulk C60 is maintained. Initial isla nd growth occurs on terrace sites away from substrate step edges, whic h bunch with increasing fullerne coverage. Above monolayer coverage, C 60 grows epitaxially, maintaining twofold rotational symmetry. Tunneli ng spectroscopy is used to explore differences between the electronic structure in the monolayer and multilayer regimes.