PROCESS-CONTROL IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CDTE

The metalorganic chemical vapor deposition of CdTe on (100) oriented G aAs was performed under atmospheric pressure. By using a well-designed reactor and controlling total hydrogen flow rate, specular layer was obtained at a temperature range of 613 approximately 713 K. X-ray diff raction and electron microscopy revealed the (111) growth orientation and presence of twins. The photoluminescence measurements indicate tha t defects and nonradiative recombination centers increase with departu re from the optimum hydrogen flow rate of 1000 sccm. The optimum growt h condition corresponds to that of uniform deposition rate calculated on the basis of flow dynamics.