THERMOELECTRIC PROPERTIES OF FESI2-BASE S EMICONDUCTORS WITH AG ADDITION

Authors
WATANABE T HASAKA M MIYASE T
Citation
T. Watanabe et al., THERMOELECTRIC PROPERTIES OF FESI2-BASE S EMICONDUCTORS WITH AG ADDITION, Nippon Kinzoku Gakkaishi, 58(3), 1994, pp. 353-358
Citations number
10
Categorie Soggetti
Metallurgy & Mining
Journal title
Nippon Kinzoku Gakkaishi → ACNP
ISSN journal
00214876
Volume
58
Issue
3
Year of publication
1994
Pages
353 - 358
Database
ISI
SICI code
0021-4876(1994)58:3<353:TPOFSE>2.0.ZU;2-7
Abstract
The objective of this paper is to fabricate a thermoelectric semicondu ctor with high-generating power. After powders were prepared from the melt-spun ribbons of FeSi2-1 at%M (M = B, Mn, Co) which were made by a single roll method, they were sintered with Ag-powder or AgNO3-soluti on. When the powders of FeSi2-1 at%Co were sintered with AgNO3-solutio n, the large power factor is obtained due to the reduced electrical re sistivity.