DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM

Authors
ANDREEV AN IVANOV PA STRELCHUK AM SAVKINA NS CHELNOKOV VE SHAPOSHNIKOV IR
Citation
An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
7
Year of publication
1994
Pages
679 - 679
Database
ISI
SICI code
1063-7826(1994)28:7<679:DBOESL>2.0.ZU;2-W
Abstract
A procedure has been developed for fabricating SiC-6H dynistor structu res by sublimation in an open growth system.