OBSERVATION OF AN ELECTRON TRAP AT E(C)-0.41 EV IN INP-FE BY A METHODOF THERMALLY STIMULATED CURRENTS

Curves of the thermally stimulated current in InP:Fe single crystals h ave been measured before and after electron bombardment (E = 3.5-4 MeV , D = 5 x 10(15)-3 x 10(17) cm(-2)). Five trapping levels, with depths of 0.14, 0.17, 0.27, 0.30, and 0.41 eV, were observed in the crystals before bombardment. After the bombardment, only a single trapping lev el, with a depth of 0.41 eV, was exhibited. It is shown that at T < 30 0 K a dark conductivity of crystals bombarded by electrons in a dose D = 3 x 10(17) cm(-2) is activated because of a thermal scattering of e lectrons from the donor-like level at E(c) -0.4 eV into the conduction band.