PHOTOSENSITIVE NATIVE-OXIDE-P-IN4SE3 HETEROSTRUCTURES

The photoelectric properties of native-oxide-p-InSe heterostructures h ave been studied. The diodes were fabricated, for the first time, by t hermal oxidation of an InSe substrate. The measured capacitance-voltag e and current-voltage characteristics demonstrate that the structures are of high quality. The long-wave edge of the photoresponse of the st ructures is near 1.8 mu m. A qualitative energy-band diagram is constr ucted for the heterostructure. Some photoelectric properties of the st ructure are reported.