EXTRACTION OF MINORITY-CARRIERS IN PHOTORESISTIVE CDXHG1-XTE CRYSTALSWITH VARIOUS CONDUCTIVITIES

Authors
VLASENKO AI LYUBCHENKO AV
Citation
Ai. Vlasenko et Av. Lyubchenko, EXTRACTION OF MINORITY-CARRIERS IN PHOTORESISTIVE CDXHG1-XTE CRYSTALSWITH VARIOUS CONDUCTIVITIES, Semiconductors, 28(7), 1994, pp. 695-696
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
7
Year of publication
1994
Pages
695 - 696
Database
ISI
SICI code
1063-7826(1994)28:7<695:EOMIPC>2.0.ZU;2-A
Abstract
The extraction of minority charge carriers has been studied in CdxHg1- xTe crystals with x similar or equal to 0.21-0.22 with n-type, p-type, and mixed conductivities. A simple relation is found for analyzing th e effect. Experimental values of the lifetime and of the electric fiel d at which the extraction begins are used to calculate the ambipolar m obility, which characterizes the mobility of minority carriers in n- a nd p-type crystals.