DEFECTS IN BORON-DOPED AMORPHOUS-SILICON

The ultrasoft x-ray emission spectra of a-Si:H samples doped with boro n from the vapor phase and by ion implantation have been studied. This x-ray method can be used successfully to determine the concentration of neutral ruptured bonds (D-0). Transformations of the spectra as a r esult of variations in the doping level can be explained on the basis of a defect charge exchange D-0 --> D+, where D+ is a positively charg ed ruptured bond. There are differences between the spectra of the mat erials doped with boron by the different methods.