Dm. Bercha et al., BAND-STRUCTURE OF DEFORMED ORTHORHOMBIC CDSB, ZNSB, AND IN2SE3 CRYSTALS - MODELING OF SUPERLATTICES, Semiconductors, 28(7), 1994, pp. 711-714
The band structure of CdSb, ZnSb, and In4Se3 crystals subjected to def
ormation is calculated. The deformation potentials, the baric coeffici
ent of the change in the width of the band gap, and the temperature co
efficient of this change are determined. The results agree satisfactor
ily with experimental data. There is a deviation from a parabolic shap
e of the valence band and the conduction band at low energies in the I
n4Se3 crystal. This deviation is accompanied by a negative curvature.
Long-period strained superlattices are modeled on the basis of CdSb an
d ZnSb crystals.