BAND-STRUCTURE OF DEFORMED ORTHORHOMBIC CDSB, ZNSB, AND IN2SE3 CRYSTALS - MODELING OF SUPERLATTICES

Citation
Dm. Bercha et al., BAND-STRUCTURE OF DEFORMED ORTHORHOMBIC CDSB, ZNSB, AND IN2SE3 CRYSTALS - MODELING OF SUPERLATTICES, Semiconductors, 28(7), 1994, pp. 711-714
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
7
Year of publication
1994
Pages
711 - 714
Database
ISI
SICI code
1063-7826(1994)28:7<711:BODOCZ>2.0.ZU;2-C
Abstract
The band structure of CdSb, ZnSb, and In4Se3 crystals subjected to def ormation is calculated. The deformation potentials, the baric coeffici ent of the change in the width of the band gap, and the temperature co efficient of this change are determined. The results agree satisfactor ily with experimental data. There is a deviation from a parabolic shap e of the valence band and the conduction band at low energies in the I n4Se3 crystal. This deviation is accompanied by a negative curvature. Long-period strained superlattices are modeled on the basis of CdSb an d ZnSb crystals.