SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS

Authors
ANDREEV AN SNEGOV FM STRELCHUK AM CHELNOKOV VE
Citation
An. Andreev et al., SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS, Semiconductors, 28(7), 1994, pp. 730-732
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
7
Year of publication
1994
Pages
730 - 732
Database
ISI
SICI code
1063-7826(1994)28:7<730:ST-CFO>2.0.ZU;2-I
Abstract
Certain features of silicon carbide, which account for the characteris tic features of thyristors made from them, are discussed. The switchin g current, the holding current, the breakdown voltage, and the switchi ng voltage are estimated for thyristors based on 6H-SiC. At the curren t state of the art, it would be possible to fabricate silicon carbide thyristors with switching voltages of 500-700 V.