FINITE-ELEMENT ANALYSIS OF THERMAL-STRESSES IN A SILICON PRESSURE SENSOR FOR VARIOUS DIE-MOUNT MATERIALS

Citation
Yc. Lin et al., FINITE-ELEMENT ANALYSIS OF THERMAL-STRESSES IN A SILICON PRESSURE SENSOR FOR VARIOUS DIE-MOUNT MATERIALS, Sensors and actuators. A, Physical, 44(2), 1994, pp. 145-149
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
44
Issue
2
Year of publication
1994
Pages
145 - 149
Database
ISI
SICI code
0924-4247(1994)44:2<145:FAOTIA>2.0.ZU;2-Z
Abstract
The performance of a silicon micromachined pressure sensor can be sign ificantly affected by the die-attach material and the mounting configu ration of the die in its package. Packaging stresses transmitted to th e piezoresistive element implanted in the sensing die can induce an er ror in the voltage output of the sensor. A finite-element model is dev eloped to analyse the effects of different die-mounting configurations , die-attach materials and sensor-element constraints. The model calcu lates the temperature-induced stress affecting the piezoresistive elem ent ion-implanted on the surface of the pressure-sensing die. Aluminiu m nitride produces the minimum offset. The 110 mil glass constraint pr ovides better mechanical isolation from the stresses produced by the t hermal mismatch between the silicon/glass component and the substrate.